Strain engineering of magnetic state in vacancy-doped phosphorene

来源 :第十九届全国凝聚态理论与统计物理学术会议 | 被引量 : 0次 | 上传用户:chengxuyuanx
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  Inducing and manipulating the magnetism in two-dimensional materials play an important role for the development of the next-generation spintronics.In this letter,the effects of the biaxial strain on magnetic properties of vacancy-doped phosphorene are investigated using first principles calculation.We find although only SV956 doping induces magnetism for unstrained phosphorene,the biaxial strain induces nonzero magnetic moment for and modulates SV5566 and DVa doped phosphorene.The biaxial strain can also modulate the magnetic state for SV956,SV5566 and DVa doped phosphorene.The local magnetic moment derives from the spin polarization of the dangling bonds near the vacancy.The biaxial strain influences the local bonding configuration near the vacancy which determines the presence of dangling bonds,and then modulates the magnetic state.Our findings promise an effective route for the operation of phosphorene-based spintronic devices.
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