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5. Atomic Layer Deposited Y2O3 On GaAs(001)-4x6-Thickness Dependence Of Crystallographic Structures And

Atomic Layer Deposited Y2O3 On GaAs(001)-4x6-Thickness Dependence Of Crystallographic Structures And

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：shirley09liu

【摘 要】

：

　　Molecular beam epitaxy(MBE)has been used to grow rare-earth oxide films of Gd2O3 and Y2O3 epitaxially on GaAs(001)-4x6,GaAs(111)A,Si(111),and GaN(0001).Inte

【作 者】

：

C.K.Cheng S.Y.Wu K.H.Chen C.H.Hsu J.Kwo M.Hong 

【机 构】

：

Grad.Inst.Appl.Phys.andDept.Phys.,Natl.TaiwanUniv.,Taipei,TaiwanDept.Phys.,Natl.TsingHuaUniv.,Hsinch

【出 处】

：

2015台湾物理年会

【发表日期】

：

2015年1期

【关键词】

：

x-ray diffraction C-V curve Y2O3 

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论文部分内容阅读

　　Molecular beam epitaxy(MBE)has been used to grow rare-earth oxide films of Gd2O3 and Y2O3 epitaxially on GaAs(001)-4x6,GaAs(111)A,Si(111),and GaN(0001).Interestingly,they have different crystallographic structures with different film thickness on the latter three substrates.

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