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5. Depression of positive magneto-conductance due to anti-weak localization effect in annealed In2O3-Zn

Depression of positive magneto-conductance due to anti-weak localization effect in annealed In2O3-Zn

来源 :The 26th International Conference on Low Temperature Physics | 被引量 : 0次 | 上传用户：yyzw98

【作 者】

：

B.Shinozaki S.Ezaki K.Hidaka K.Makise T.Asano N.Kokubo K.Yamada K.Yano H Nakamura 

【机 构】

：

Department of Physics, Kyushu University Fukuoka, Japan

【出 处】

：

The 26th International Conference on Low Temperature Physics

【发表日期】

：

2011年1期

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