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Improved electrical properties in AlGaN/GaN heterostructures using AIN/GaN/AIN quantum well as chann
【机 构】
：
National Key Lab.Of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang,China
【出 处】
：
The 2nd International Syposium on Innovations in Advanced Ma
【发表日期】
：
2008年期
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