论文部分内容阅读
运用全积分散射理论,结合积分球的光度特性,研制了一种用于粗糙度测量的比较法全积分散射仪。用原子力显微镜分析了用相同的抛光工艺制备的三片超光滑硅片的表面粗糙度,其结果均在0.14～0.19 nm之间,说明了此抛光工艺的稳定性;用原子力显微镜测量值为0.143 nm均方根粗糙度的超光滑硅片作为参考样片,比较了其他三片相同工艺制备的硅表面的全积分散射测量结果,结果显示与标准片的测量结果非常接近,均在0.14～0.18 nm之间,验证了全积分散射法的合理性;进一步分析了锗、铝、碳化硅等表面的全积分散射测量结果,结果呈现出明显的差异,说明该方法具有较高的灵敏度和较大的动态范围。
Using the theory of total integral scattering, combined with the photometric characteristics of the integrating sphere, a comparative total-law scatterometer for roughness measurement was developed. The surface roughness of the three ultra-smooth silicon wafers prepared by the same polishing process was analyzed by atomic force microscopy and the results were between 0.14 and 0.19 nm, indicating the stability of the polishing process. The atomic force microscope measured 0.143 nm root mean square roughness ultra-smooth silicon wafer as a reference sample, compared with the other three identical silicon prepared by the same process of total surface scattering measurement results showed that the measurement results with the standard film are very close, are in 0.14 ~ 0.18 nm , The rationality of total-integral scattering method is verified. The results of total-integral scattering measurements of germanium, aluminum, silicon carbide and other surfaces are further analyzed. The results show that the method has the advantages of high sensitivity and large Dynamic Range.