完成1 880nm高阶锑化镓侧向耦合分布反馈半导体激光器的制备。采用侧向耦合(Lateral coupled)结构使得外延材料可以一次生长完成,避免了外延层中Al组分容易氧化的特性导致的二次外延生长困难的问题,采用接触式紫外光刻技术制备了高阶光栅,大大降低了激光器的制备成本,实现了室温1 880nm单模连续波长激射,最大输出功率14.5mW,波长随温度漂移速率0.000 5nm/mA。 The preparation of 1 880nm high-order gallium antimonide (GaAs) lateral-coupling distributed feedback semiconductor laser was completed. The use of a laterally coupled structure enables the epitaxial material to be grown once and avoids the problem of secondary epitaxial growth caused by the easy oxidation of the Al component in the epitaxial layer. A high-order Grating, which greatly reduces the preparation cost of the laser, realizes the single-mode continuous-wave lasing at room temperature of 1880 nm with the maximum output power of 14.5 mW and the wavelength drift rate with the temperature of 0.000 5 nm / mA.