Phonon Assisted Ultrafast Charge Transfer at van der Waals Interface

来源 :2016年理论与高性能计算化学国际会议(International Conference on Theoretical | 被引量 : 0次 | 上传用户:caibo782
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  The van der Waals interfaces of two-dimensional(2D)semiconductor are central to new device concepts and emerging technologies in light-electricity interconversion where the efficient charge separation is key factor.Contrary to general expectation,efficient electron-hole separation can occur in vertically stacked transition-metal dichalcogenide(TMD)heterostructure bilayers through ultrafast charge transfer between the neighboring layers despite their weak van der Waals(vdW)bonding.
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