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  5. Band Alignment of Atomic Layer Deposited Al2O3/Zn0.8Al0.2Oy Hetero-interface Determined by X-ray Pho

Band Alignment of Atomic Layer Deposited Al2O3/Zn0.8Al0.2Oy Hetero-interface Determined by X-ray Pho

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：ksxy008
【摘 要】
：
Al2O3 and ZnO/Al2O3 are prepared on silicon substrates via atomic layer deposition (ALD). Diethyl zinc (DEZ), trimethly aluminum (TMA) and deionized water are used as Zn, Al and oxidant precursors res
【作 者】
：
Baojun Yan Shulin Liu Yuekun Heng Yuzhen Yang 
【机 构】
：
Institute of High Energy Physics and State Key Laboratory of Particle Detection and Electronics,Chin
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
【发表日期】
：
2015年5期
【关键词】
：
Band alignment Atomic layer deposition X-ray photoelectron Hetero-interface 
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　　Al2O3 and ZnO/Al2O3 are prepared on silicon substrates via atomic layer deposition (ALD). Diethyl zinc (DEZ), trimethly aluminum (TMA) and deionized water are used as Zn, Al and oxidant precursors respectively. A sandwich structure of ZnO/Al2O3 stack is proposed for ZnO/Al2O3 intermixing. The Zn0.8Al0.2Oy composite thin film can be obtained by adjusting ZnO/Al2O3 ALD pulse sequence. The film thicknesses and microstructure are characterized by spectroscopy ellipsometry and X-ray diffraction. The band offset and alignment of atomic layer deposited Al2O3/Zn0.8Al0.2Oy hetero-interface are systematically studied in this paper.
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