Many luminescent materials with aggregation-induced emission(AIE)characteristics have been developed to improve the performance of OLEDs by solving the problem of aggregation-caused quenching effect observed in most conventional chromophores.To further simplify the device configuration and lower the fabrication cost,it is desirable to design new luminescent materials that can serve both as light emitters and hole-/electron-transporting materials.To respond to this demand,we synthesized AIE luminophores bearing NPB and dimesitylboryl groups(TPE-NPB and(MesB)2 MPPS)as hole-transporting(p-type)and electron-transporting(n-type)light emitters,respectively(Scheme 1).Double-layer OLED devices using TPE-NPB and(MesB)2 MPPS are fabricated without sacrificing the device efficiency.The device using(MesB)2 MPPS as both light emitter and electron transporting layer affords excellent performances with high electroluminescence efficiencies of up to 13.9 cd A -1,4.35%and 11.6 lm W -1.The device based on TPE-NPB gives maximum luminance and current efficiency of 11 981 cd m-2 and 11.9 cd A-1.All these results demonstrate the effective access to p-type and n-type solid-state emissive materials with practical utility.