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Electrolyte gating with ionic liquid has attracted significant attention as a powerful tool for greatly modulating the physical properties in a variety of materials.However,for electrolyte gating in transitional metal oxides,there has been controversy on the origin of electronic phase transition.(See Ref.[1-3] and many other papers published in the past three years)Herein,we report the control and the mechanism of metal-insulator transition via ionic liquid gating in hole doped manganite films.