背景OISF-Oxidation induced Stacking Faults由于每个层错都结合着部分位错,所以层错对硅片电子性质有很多影响:·降低lifetime·当OISF贯穿p-n接时,产生漏电·造成器件breakdownOutline□问题背景□OISF产生机理□OISF改善方案的提出□改善结果对比□结论OISF来源The following sites on wafer surface
Recycling trace rare earth elements (REEs) from effluents of mine and refinery is vital for protection of global environment and utilization of valuable REE resource.In this work, a novel and highly e