【摘 要】
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Semiconductor Quantum Dots (QDs) are nanoscale and three-dimensional structures, which shown to posses unique optical and electronic properties.It has a great potential of applications in high perform
【机 构】
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Department of Electronic Science, Guizhou University, Guizhou Guiyang, 550025, PR China
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Semiconductor Quantum Dots (QDs) are nanoscale and three-dimensional structures, which shown to posses unique optical and electronic properties.It has a great potential of applications in high performance electronic and optoelectronic devices.In the present paper, vertical and lateral alignment of InGaAs quantum dots separated by GaAs spacer layers indicate that the thickness of spacer layer modulate the quantum dots space distribution.The surfaces of spacer layer with various thickness has been observed by scanning tunnel microscopy, and the results show various amount of holes formed on the surfaces, the morphology of spacer layer surface corresponds to the quantum dots distribution closely.Surface strain and surface diffusion on spacer layer surface together decide the distribution of multilayer stacked structure quantum dots.
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