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Interfacial electronic properties of the MoOx/CH3NH3PbI3 interface are investigated using UPS and XPS.It is found that the pristine CH3NH3PbI3 film coated onto the substrate of PEDOT:PSS/ITO by two-step method [1] behaves as an n-type semiconductor,with a band gap of~1.7 eV [2] and a valence band (VB) edge of 1.43 eV below the Fermi energy (EF) .