论文部分内容阅读
Experimental Observation of Temperature Dependence of Circular Photogalvanic Effect in GaAs/Al0.3Ga0
【机 构】
:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sc
【出 处】
:
The 26th International Conference on Low Temperature Physics
【发表日期】
:
2011年1期
其他文献
Theoretical study of Jeff =1/2 Mott insulator in Ir oxides: cooperation of a strong spin-orbit coupl
会议