Ultrasonic Investigation of Ground State of Vacancy Orbital in Boron-Doped Silicon - 论文文献免费下载 - 搜论网

Ultrasonic Investigation of Ground State of Vacancy Orbital in Boron-Doped Silicon

来源 :The 26th International Conference on Low Temperature Physics | 被引量 : 0次 | 上传用户：lijb2009

【作者】

：

M.Akatsu S.Baba T.Goto S.Komatsu K.Horie K.Mitsumoto T.Ogawa Y.Nemoto H.Y-Kaneta

【机构】

：

Graduate School of Science and Technology, Niigata University, Niigata, Japan

【出处】

：

The 26th International Conference on Low Temperature Physics

【发表日期】

：

2011年1期

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