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5. In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers

In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers

来源 :第十届中红外光电子材料与器件国际会议 | 被引量 : 0次 | 上传用户：marticabi

【摘 要】

：

Tunneling quantum dot infrared photodetector (QDIP) has been demonstrated to be able to reduce the dark current significantly [1].In this paper, we report an In0.4Ga0.6As/Al0.1Ga0.9As QDIP device with

【作 者】

：

Jianliang Huang Wenquan Ma Yanhua Zhang Yongheng Huo Lianghui Chen 

【机 构】

：

Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 1

【出 处】

：

第十届中红外光电子材料与器件国际会议

【发表日期】

：

2010年4期

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论文部分内容阅读

　　Tunneling quantum dot infrared photodetector (QDIP) has been demonstrated to be able to reduce the dark current significantly [1].In this paper, we report an In0.4Ga0.6As/Al0.1Ga0.9As QDIP device with double tunneling barrier structures (DTBs).

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