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5. Energy gaps of MH3(M=Sc,Y)under high pressure

Energy gaps of MH3(M=Sc,Y)under high pressure

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：ziyoushenghuozhe

【摘 要】

：

MH3(M=Sc,Y)can be formed under pressure.The MH3 hcp phases are semiconductor and then transform to metal which are fcc phases under high pressure.

【作 者】

：

T. Pakornchote T. Bovornratanaraks U. Pinsook 

【机 构】

：

Center of Excellence in the Forum for Theoretical Science,Department of Physics,Faculty of Science,C

【出 处】

：

第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　MH3(M=Sc,Y)can be formed under pressure.The MH3 hcp phases are semiconductor and then transform to metal which are fcc phases under high pressure.

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