Through-silicon-via (TSV) interconnects can provide the shortest length and the highest density with significantly reduced signal delay and power consumption. For the majority of TSV integration，full wafers of a specific function are produced separately and then stacked vertically in order to create a multi-functional device. Due mainly to a thermal budget of CMOS devices，bonding processes compatible with CMOS processing are limited only to solder-based bonding，plasma-assisted oxide bonding，direct Cu-Cu bonding，polymer adhesive bonding，metal-polymer hybrid bonding，etc. In this work，we described the major features of bonding system for reliable，void-free bonding and also presented theexperimental results for each bonding process.