We have prepared three kinds of oxides films with the same thickness as buffer layers on biaxially textured NiW substrates, including La2Zr2O7 (LZO), CeO2 and their double layers (CeO2/LZO) using a chemical solution deposition (CSD) process, respectively. After crystallized in Ar-4％H2, these textured buffer layers samples and NiW substrates were annealed in Ar and Ar-2％O2. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that their texture was destroyed and there have great changes in their morphology after the samples annealed in Ar and Ar-2％O2. It indicates their ability to prevent oxygen diffusion is limited and the oxidation of NiW substrate, resulting from the lattice oxygen diffusion, is not beneficial to the transfer of texture from NiW to superconducting layer. Moreover, it was found there is great difference of ability to prevent oxygen diffusion between above-mentioned three kinds of buffer layers architectures, leading to the different amount of oxides related NiW substrate and their discrepant morphology. We considered that the oxidation of NiW substrate is related with the annealing conditions and the intrinsic lattice oxygen diffusion ability of buffer layers in the oxidizing annealing process. Through selecting oxides material with small oxygen diffusion transmission and great tolerance ability to oxygen vacancies as buffer layers, and adjusting the annealing procedure, their thickness and density, the ability to prevent oxygen diffusion of buffer layers can be efficiently improved.