Quantum Spin Hall State and Spin Current in Graphene Heterostructure Device

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：luote51499

【摘要】

：

　　Using density functional theory and tight-binding methods,we study the electronic structure,quantum spin-Hall phase and spin currents of graphene-Sb2Te3 het

【作者】

：

Chan-hung Shek Guangcun Shan Wei Huang

【机构】

：

City University of Hong Kong,China

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Using density functional theory and tight-binding methods,we study the electronic structure,quantum spin-Hall phase and spin currents of graphene-Sb2Te3 heterostructure-based spintronic devices.

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Quantum Spin Hall State and Spin Current in Graphene Heterostructure Device

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