We designed a new sort of Pb-free ferroelectric film: Ba (Ti0.89Sn0.11) O3 (BTS) with a chemical constitution at the quasi-quadruple point where the four phases: Cubic, Tetragonal, Orthorhombic, Rhomb
There is a lot of glass fiber reinforced plastic (FRP) waste every year.Its low utilization rate and serious secondary pollution cause many problems.In this paper, FRP waste was added to enhance unsat
在太阳能热发电储热系统中,氯化物混合熔盐比单熔盐有更高的转化效率,但是同样存在强腐蚀性问题。本文通过在镍基高温合金钢Inconel625表面热扩散渗铬与渗铝,然后经预氧化使合金表面形成氧化铬与氧化铝保护膜,研究其合金在900℃二元混合氯化物熔盐中的腐蚀行为,采用带有能谱的扫描电镜分析腐蚀产物与形貌,XRD分析产物组成。
在二元非离子表面活性剂介入下，采用化学氧化界面聚合法，在0-5℃下制备聚吡咯膜。研究了Span80/Tween80复配体系对聚吡咯成膜的影响，并利用红外光谱测试、扫描电子显微镜测试、循环伏安和交流阻抗对聚吡咯膜的性能进行表征。
研究了采用超高温石墨化法,无需其他任何附加工艺和添加催化剂等,一次性制备品质优良的人造石墨、类石墨增碳剂和高级还原剂等碳材料,并对碳材料进行了化学成分分析,颗粒堆积电阻率测试,XRD物相组成及石墨化程度测试,SEM微观结构形貌表征和拉曼散射晶化程度和晶体缺陷表征,同时还对超高温石墨化法进行了展望。
Ti (C,N)-based cermets were prepared by pressureless sintering using micron-sized TiC and TiN powders as main starting materials and Ni and Co as metal binder.The fracture micrographs of Ti (C,N)-base
In the present work, the giant magnetoimpedance effect has been found in Fe73.5Cu1Nb2V1Si13.5B9 nanocrystalline ribbons.The optimum annealing temperature for obtaining largest GMI is about 550℃.
The structuraland electric properties of GaN nanoribbons (GaNNRs) with both zigzag edge (ZGaNNRs) and armchairedge (AGaNNRs)are studied byusing the first-principles projector augmented wave (PAW)poten
GaN单晶衬底在Ⅲ-Ⅴ族半导体器件方面,具有重大的意义和广阔的应用前景。为了进一步提高功率器件的性能和可靠性,需要采用极低缺陷密度单晶GaN衬底。目前,GaN体单晶的主要生长方法有HVPE、氨热法、高压熔液法和Na Flux法。其中,Na Flux法是一种近热力学平衡条件下的生长方法,生长速率比氨热法快几十倍,而且生长设备相对简单,利于降低生长成本。但是,Na Flux法直接生长不容易获得单晶。将
AlGaN沟道HEMTs以其优异的超高击穿电压特性已在世界范围内引起了广泛关注[1].本文利用MOCVD制备了9组不同结构的AlxGa1-xN/AlyGa1-yN样品(A～I)以及HEMTs,并探究了沟道层Al组分和缓冲层结构对材料结晶质量以及器件性能的影响.