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Instability induced by air in amorphous Zn-Sn-O (ZTO) thin film transistor
【机 构】
：
Electronic Materials Center,Korea Institute of Science and Technology,Seoul 136-791,Republic of Kore
【出 处】
：
第六届国际氧化锌及相关材料研讨会
【发表日期】
：
2010年4期
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