Doped titanium dioxide(TiO2)has demonstrated great potential in transparent conducting oxides(TCOs),due to its wide band gap(anatase: 3.2eV,mtile: 3.0eV)[1],excellent chemical stability[2],and low cost.Dopants,such as Nb,Ta,Mn and C have been chosen to obtain n-type or p-type TiO2 TCOs[3,4].In this work,Zn-doped TiO2 thin films were demonstrated to be used in both transparent conducting electrode and water splitting.The doped films were deposited on a quartz or FTO substrates by magnetron co-sputtering method using both titanium and ZnO targets.Atmosphere of Ar and O2 mixture with the ratio of 20:3 was used as work gas,and the work pressure were keep at 1.0 Pa.The bias applied on the substrate was varied from 0 to 150V.The Zn doping concentration was controlled by varying the sputtering power.The as-deposited films were annealed in vacuum at 500℃ for 30min.