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We demonstrate the fabrication of efficient hybrid solar cells based on Si nanowires(Si NWs)and poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate(PEDOT:PSS).The surface of Si NWs can be passivated by diallyl disulfide(DADS)under UV illumination at room temperature to reduce the recombination of photo-generated carriers.Compared with cells employing oxide or hydrogen-passivated Si NWs,the power conversion efficiency(PCE)of devices employing DADS-passivated NWs was improved by a factor of 20 and 2,respectively.Moreover,the solar cell using DADS-passivated NWs exhibited good stability in air.This UV-initiated passivation procedure with DADS was simpler than the two step chlorination/alkylation process(usually applied for Si NW surface passivation)to form the stable Si-C bonds,which can lower the cost and improve performance of Si NW-based solar cells.