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5. Band Gap Engineering of Ⅲ-Ⅴ Nanowires and Nanobelts

Band Gap Engineering of Ⅲ-Ⅴ Nanowires and Nanobelts

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：lygzzm

【摘 要】

：

　　Ⅲ-Ⅴ semiconductor nanowires(NWs),such as InAs,GaAs,InP,are promising materials for applications in infrared optoelectronic devices because of their typica

【作 者】

：

Xuehong Zhang Liang Ma Huang Tan Anlian Pan 

【机 构】

：

College of Physics and Microelectronics Science,China

【出 处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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论文部分内容阅读

　　Ⅲ-Ⅴ semiconductor nanowires(NWs),such as InAs,GaAs,InP,are promising materials for applications in infrared optoelectronic devices because of their typically high carrier mobilities and narrow band gap.

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