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We highlight the advantages of ion implantation over POCI3 diffusion,and illustrate higher efficiencies with Intevacs ENERGiTM ion implant system.We have demonstrated industrial high efficiency phosphorus emitters up to 19.4% and 644mV Voc on standard industrial screen printed mono-crystalline cells.Additionally,we achieved 20.2% efficiency on a p-type PERC cell architecture.Other advanced cell architectures,such as PERT cells,require boron doped regions-either as a back surface field or as an emitter.Ion implantation has been a candidate for boron doping.In this paper we illustrate how Intevacs ENERGi ion implantation system can provide high throughput (2400 wph) boron doped regions with excellent electrical properties.ENERGi boron implantation in conjunction with ENERGi phosphorus ion implantation enables cost efficient passivated rear architectures such as PERT cells on n-or-p-type wafers.We present initial results (JOE,J0,and implied Voc) on passivated symmetric ENERGi boron implanted as well as un-metalized PERT structures.Patterned (local) B and P implantation open the possibility of industrial PERL and IBC cell designs.