论文部分内容阅读
One of the key issues for the practical application of the current-induced spintronic devices is of reducing the critical current(Icr)for the current-induced magnetization reversal.The perpendicular magnetic anisotropy(PMA)and high spin polarization of the ferromagnetic layer are theoretically predicted and experimental verified to be useful for reducing the critical current of the magnetic reversal.In this talk,PMA of Heusler alloys(Co2FeAl0.5Si0.5)will be discussed.A strong PMA had been achieved for a thick Co2FeAl0.5Si0.5 layer at the annealing temperature of 300 ℃.Inserted Pd layer between Ta and Co2FeAl0.5Si0.5 layers was crucial to obtain PMA in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films.However,the thickness of inserted Pd layer has no significant effect on the value(Keff)of PMA.The films annealed at 300 ℃ remain a similar Keff of around 1.23× 106 erg/cm3 while the inserted Pd layer is beyond a critical thickness