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5. An InP/InGaAs Metamorphic δ-Doped Heterojunction Bipolar Transistor with High Current Gain and Low O

An InP/InGaAs Metamorphic δ-Doped Heterojunction Bipolar Transistor with High Current Gain and Low O

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：bengkuia521

【摘 要】

：

In this article,a high-performance InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) grown on low-cost GaAs substrate by solid-source MBE is first experimentally demonstrated.

【作 者】

：

Jung-Hui Tsai Sheng-Shiun Ye Yung-Chun Ma Jia-Cing Jhou 

【机 构】

：

Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road,Kao

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

InP/InGaAs metamorphic heterojunction bipolar transistor current gain Offset vol 

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In this article,a high-performance InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) grown on low-cost GaAs substrate by solid-source MBE is first experimentally demonstrated.

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