SiC衬底上N极性GaN薄膜的MOCVD外延生长研究

来源 :第13届全国MOCVD学术会议 | 被引量 : 0次 | 上传用户：khalista7

【摘要】

：

在C面6H-SiC衬底上进行了MOCVD外延N极性GaN薄膜的生长实验.外延GaN之前先生长一层50nm厚高温AlN缓冲层用于缓解GaN薄膜和SiC衬底之间的失配应力,继续生长2μm GaN外延材料.实验表明,C面SiC衬底上可以生长出结晶质量和表面形貌较好的N极性GaN薄膜.

【作者】

：

彭大青李忠辉张东国李亮倪金玉董逊罗伟科李传皓

【机构】

：

微波毫米波单片集成和模块电路重点实验室,南京电子器件研究所,南京210016

【出处】

：

第13届全国MOCVD学术会议

【发表日期】

：

2014年2期

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SiC衬底上N极性GaN薄膜的MOCVD外延生长研究

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