Characterization of physical properties for Zn-doped Sb3Te films

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：momoyangli

【摘要】

：

【作者】

：

Guoxiang Wang Xiang Shen Qiuhua Nie

【机构】

：

Faculty of Information Science and Engineering,Ningbo University,Ningbo,315211,China ;Shanghai Insti

【出处】

：

International Conference on Nanoscience & Technology,China 2

【发表日期】

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2013年3期

【关键词】

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Thin films Thermal stability Crystalline resistance

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　　Zn-doped Sb3Te phase-change material has been investigated for phase change memory applications.The structural, thermal, electrical and optical properties were discussed systematically.The results show that Zn-doped Sb3Te films have higher crystallization temperature than conventional Ge2Sb2Te5 films, indicating an improved amorphous thermal stability.

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Characterization of physical properties for Zn-doped Sb3Te films

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