Microstructure and electrical properties of La-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated.XRD showed that most diffraction peaks of ZnO were equal, and the crystals of ZnO grew well.SEM and AFM results indicated that the samples have a good structure and lower surface roughness.The nonlinear V-I characteristics of the films show micro La2O3 develop the electrical properties largely and the best doped content is 0.3 mol%, with the leakage current is 0.252 μA,the threshold field is 150 V/mm and the nonlinear coefficient is 4.0 in detail.