Electroluminescence study of InAs/InAs(Sb)/InAsSbP LED heterostructures at 4.2-300 K

来源 :The 13th International Conference on Mid-Infrared Optoelectr | 被引量 : 0次 | 上传用户：TSNT1234

【作者】

：

Kh.Salikhov K.D.Mynbaev N.L.Bazhenov A.A.Semakova M.P.Mikhailova N.D.Stoyanov S.S.Kizhaev S.S.Molchanov A.P.Astakhova A.V.Chernyaev

【机构】

：

The Institute for Advanced Study,Academy of Sciences of Tatarstan,Russia

【出处】

：

The 13th International Conference on Mid-Infrared Optoelectr

【发表日期】

：

2016年10期

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Electroluminescence study of InAs/InAs(Sb)/InAsSbP LED heterostructures at 4.2-300 K

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