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  5. Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

Shear mode properties of c-axis parallel oriented ScxAl1-xN films grown by RF bias sputtering

来源 :2015两岸超声技术与医学研讨会 | 被引量 : 0次 | 上传用户：yangjianglong
【摘 要】
：
Background,Motivation and Objective Because of their high piezoelectricity,Sc heavily doped AlN films are attractive for various acoustic wave devices.
【作 者】
：
Shinji Takayanagi Takahiko Yanagitani Mami Matsukawa 
【机 构】
：
Doshisha University,Kyotanabe,Japan Waseda Univer
【出 处】
：
2015两岸超声技术与医学研讨会
【发表日期】
：
2015年5期
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Background,Motivation and Objective Because of their high piezoelectricity,Sc heavily doped AlN films are attractive for various acoustic wave devices.
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