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This paper investigates a simplified metal induced crystallization(MIC) of a-Si,named solution-based MIC(S-MIC).The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol.a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC.It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time.The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si,besides the diffusion of nickel disilicide.The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm2/(V · s).By using this S-MIC poly-Si,thin film transistors and display scan drivers were made,and their characteristics are presented.
This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (S-MIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol. A -Si thin film was deposited with low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition as precursor material for MIC. It has been found that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. the highest electron Hall mobility of thus prepared S-MIC poly- Si is 45.6 cm2 / (V · s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.