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研究了电子隧穿出射端嵌入1.2μm厚n型弱掺杂GaAs层的三势垒双阱隧穿结构,观察到了隧穿峰谷比高达36的光生空穴共振隧穿峰.研究证实1.2μm厚n型弱掺杂GaAs层在光照下产生的大量光生空穴以及空穴隧穿出射端的23nm宽的量子阱中量子化的空穴能级对空穴隧穿谷电流的限制作用,是导致高峰谷比的光生空穴隧穿现象的主要原因.
The triple-barrier double-well tunneling structure with a 1.2μm-thick n-type weakly doped GaAs layer was studied at the tunneling exit side of the electron tunneling, and a photo-hole resonance tunneling peak with a tunneling peak-to-valley ratio of 36 was observed. a large number of photogenerated holes generated by light in the n-type lightly doped n-type GaAs layer and a quantum confinement hole in a 23 nm wide quantum well at the hole-tunneling exit end limit the hole tunneling valley current, Is the main reason leading to photo-generated hole tunneling at the peak to valley ratio.