论文部分内容阅读
大功率半导体激光器工程应用要求其寿命大于109脉冲次数,如何在短时间内快速获得大功率半导体激光器的长寿命指标,是目前业界普遍关注的问题。文中针对808nm大功率半导体激光器单bar器件,进行了温度25℃、电流100 A和温度50℃、电流100 A及温度50℃、电流115 A 3组寿命评价试验,综合利用线性回归分析、最小二乘法、拟合优度检验等统计学相关知识,确定单bar大功率半导体激光器恒温25℃外推寿命为2.86×109次脉冲次数(7 950 h),激光器激活能为0.21 eV,加速因子为1.88。并通过数据分析,确定恒温25℃最佳寿命试验时间为4 000 h,此时,既能保证外推结果的准确性,又能降低试验时间和成本,实现短期寿命试验数据对大功率半导体激光器长寿命的快速评价。
High-power semiconductor laser engineering applications require the life of more than 109 pulses, how to quickly obtain high-power semiconductor laser long-life targets, is the industry’s current concern. In this paper, a single-bar device with 808nm high power semiconductor laser was used to evaluate the life of three groups with temperature of 25 ℃, current of 100 A and temperature of 50 ℃, current of 100 A, temperature of 50 ℃ and current of 115 A, Multiplication, goodness of fit test and other statistical knowledge to determine the single-bar high-power semiconductor laser at a constant temperature 25 ℃ extrapolation life of 2.86 × 109 pulses (7 950 h), the laser activation energy of 0.21 eV, acceleration factor of 1.88 . And through data analysis, to determine the best temperature 25 ℃ life test time of 4 000 h, at this time, both to ensure the accuracy of the extrapolation results, but also reduce the test time and cost, to achieve short-term life test data for high-power semiconductor lasers Fast evaluation of long life.