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本文报导对热氮化SiO_2膜的研究结果.热氮化SiO_2膜的腐蚀特性、抗氧化特性的研究表明膜的化学结构与SiO_2不同.采用AES表面分析技术观察了膜中化学成份,从而证实了膜中的氮含量取决于氮化前的SiO_2膜厚和氮化时的条件,热氮化SiO_2膜的电学特性、抗辐射性能明显优于SiO_2膜.
In this paper, the results of the research on the thermal nitrided SiO 2 film are reported.The results show that the chemical structure of the thermal nitrided SiO 2 film is different from that of SiO 2.The chemical composition of the film was observed by AES surface analysis, The nitrogen content in the film depends on the thickness of the SiO 2 film before nitridation and the conditions during the nitridation. The electrical properties and the radiation resistance of the thermal nitrided SiO 2 film are obviously superior to those of the SiO 2 film.