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Ｓｉ／Ｇｅ超晶格外延生长技术的发展和纳米硅（ｎｃＳｉ∶Ｈ）、多孔硅（ＰＳ）发光现象的发现，引起了人们对硅基低维材料的关注．文章简要综述了近年来在Ｓｉ／Ｇｅ超晶格的电子态和光学性质以及ｎｃＳｉ∶Ｈ，ＰＳ的结构和发光机理等方面的研究进展
The development of Si / Ge superlattice epitaxial growth technology and the discovery of nano-silicon (nc-Si: H) and porous silicon (PS) luminescence have aroused people’s attention on low-dimensional silicon-based materials. In this paper, the recent progress in the electronic and optical properties of Si / Ge superlattices and the structures and luminescence mechanisms of nc-Si: H, PS