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Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density J th . The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that J th decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.
The Transistor laser (TL) model based on InGaP / GaAs / InGaAs / GaAs is analyzed and presented. It is realized that quantum well (QW) with a width of 10 nm may be formed for low base threshold current density J th. found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that J decreases with the movement of QW towards the base-emitter (BE) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.