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混合式探测器(Hybrid Photodetector,HPD)作为一种新型的光电探测器件,是真空与半导体类结合型探测器件。HPD包括沉积在输入光窗表面的光电探测阴极、固态半导体阳极芯片和保持系统真空度的固态阳极。工作时,光信号通过沉积在输入光窗表面的光电阴极转化为光电子,经过高能电场加速后获得高能量轰击阳极半导体芯片表面,产生大量的电子空穴对,电子空穴对在半导体内部进行迁移,并通过自身的雪崩效应实现倍增,最终以电流信号输出。该探测器摒弃了传统的光电倍增管的微通道板(Micro Channel Plate,MCP)等倍增器件,克服了倍增单元信号易饱和的缺陷,增大了探测器的动态范围。HPD探测器综合了光电倍增管的高灵敏度和半导体芯片优异的空间和能量分辨率,具有探测面积大、探测灵敏度高、倍增效应强、动态范围宽等优点。在高能物理、医学成像和天体物理中有着重要的应用。此外,该探测器具有多种结构,分为近贴聚焦结构、交叉聚焦结构和漏斗聚焦结构,能够满足不同使用范围的探测需求;随着半导体阳极技术的发展,HPD阳极从单一芯片逐渐过渡到阵列式阳极结构,满足了大面积探测的需求。同时数字式读出和倍增信号技术的封装技术的发展,提高了HPD探测器的信号倍增和读出速度,改善了器件的集成化程度,有利于探测信号读出速率和信噪比的提升。近年来,其单光子计数和高动态响应等能力逐步被重视,将会在未来的光电探测领域发挥更为重要的作用。
Hybrid Photodetector (HPD), as a new type of photodetection device, is a combined vacuum and semiconductor detection device. The HPD includes a photo-detecting cathode deposited on the surface of the input light window, a solid-state semiconductor anode chip, and a solid-state anode that maintains system vacuum. In operation, the optical signal is converted into photoelectrons through the photocathode deposited on the surface of the input light window, and the high-energy electric field accelerates to obtain high-energy bombardment on the surface of the anode semiconductor chip to generate a large number of electron-hole pairs. The electron-hole pairs migrate inside the semiconductor , And through its own avalanche effect multiplication, and ultimately the current signal output. The detector eliminates the multiplier such as the Micro Channel Plate (MCP) of the conventional photomultiplier tube, overcomes the defect that the signal of the multiplying unit is easy to be saturated and increases the dynamic range of the detector. HPD detectors combine the high sensitivity of photomultiplier tubes and the excellent spatial and energy resolution of semiconductor chips with the advantages of large detection area, high detection sensitivity, strong doubling effects, and wide dynamic range. In high-energy physics, medical imaging and astrophysics has an important application. In addition, the detector has a variety of structures, divided into near-focus focusing structure, cross-focusing structure and funnel focusing structure to meet the detection needs of different areas of use; with the semiconductor anode technology, HPD anode gradually transition from a single chip to Array anode structure to meet the needs of large-scale exploration. At the same time, the development of digital readout and multiplication signal technology package technology improves the signal multiplication and readout speed of the HPD detector, improves the integration of the device, and improves the signal readout rate and the signal-to-noise ratio. In recent years, its single-photon counting and high-dynamic response capabilities are gradually being taken seriously and will play a more important role in the future of photoelectric detection.