【摘 要】
：
在蓝宝石衬底上研制了具有高电流增益截止频率(f_T)的InAlN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+-GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至6
【机 构】
：
河北半导体研究所专用集成电路国家级重点实验室,
论文部分内容阅读
在蓝宝石衬底上研制了具有高电流增益截止频率(f_T)的InAlN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+-GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工艺制备了50 nm直栅.由于器件尺寸的缩小,Vgs=1 V下器件最大饱和电流(I_(ds))达到2.11 A/mm,峰值跨导达到609 mS/mm.根据小信号测试结果,外推得到器件的fT和最大振荡频率(fmax)分别为220 GHz和48 GHz.据我们所知,该f_T值是目前国内InAlN/GaN HFETs器件报道的最高结果.
On the sapphire substrate, InAlN / GaN heterojunction field effect transistors (HFETs) with high current gain cutoff frequency (f_T) have been developed.MOCVD epitaxial n + -GaN ohmic contact process has been used to reduce the size of the device, (Lsd) is reduced to 600 nm. In addition, a 50 nm straight gate is fabricated using a self-aligned process. The maximum device saturation current (I ds) reaches 2.11 A / mm at Vgs = 1 V The transconductance reaches 609 mS / mm. According to the results of the small signal test, the fT and maximum oscillation frequency (fmax) of the extrapolated device are 220 GHz and 48 GHz respectively. To our knowledge, this f_T value is currently the domestic InAlN / GaN HFETs The highest result reported by the device.
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