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一、概述硅单晶电阻率是半导体材料重要特性之一,对它的测试是采用精度高的四探针方法,其基本原理为在硅片表面上垂直压上四根金属针,若外面两根探针1、4通过恒流,那么2、3探针间便形成电位差,把所测得的电压值与流过1、4探针的电流值加上硅样片几何尺寸修正系数通过计算,从而求出在硅样片被测点的电阻率值(Ω·cm) 由于半导体材料物理性质,用四探针测
First, an overview Silicon single crystal resistivity is one of the important characteristics of semiconductor materials, its test is the use of high precision four-probe method, the basic principle of the wafer surface perpendicular to the pressure of four metal needle, if the outside two The root probe 1, 4 through the constant current, then the 2,3 probe will form a potential difference between the measured voltage and the value of the current flowing through the 1,4 probe plus silicon sample geometry correction factor calculated by , So as to obtain the resistivity value (Ω · cm) measured at the silicon sample. Due to the physical properties of the semiconductor material,