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《Electronics Letters》1992年第15期报道了25只并联谐振隧道二极管(RTD)振荡器在1.18GHz下输出5mW的结果。由于RTD振荡器能在高达712GHz时输出功率,因此,提高RTD的输出功率特性对于产生毫米波和亚毫米波功率源很有意义。在此介绍的RTD是一种新型器件。它包含4个势垒,代替了以往的2个势垒。器件的量子阱和涂敷层用In_(0.35)Ga_(0.47)As(与InP晶格匹配)制造,势垒由AlAs材料制成。新器件的优点是其微分负阻区(NDR)的电压
“Electronics Letters” No. 15 of 1992 reported the results of 25 parallel resonant tunnel diode (RTD) oscillators outputting 5 mW at 1.18 GHz. Because RTD oscillators can output power up to 712GHz, increasing the output power characteristics of the RTD makes sense for generating millimeter and submillimeter power sources. The RTD introduced here is a new type of device. It contains four barriers, instead of the previous two barriers. The quantum well and the coating of the device are made of In_ (0.35) Ga_ (0.47) As (lattice matched with InP), and the barrier is made of AlAs material. The advantage of the new device is its differential negative resistance zone (NDR) voltage