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研究了中子辐照对蓝宝石(α-Al2O3)单晶体缺陷形成及光学性能的影响,对采用提拉法与温度梯度法生长的蓝宝石晶体进行中子辐照,通过对比辐照前后的吸收及荧光光谱变化,发现辐照使得蓝宝石晶体内形成F、F+和F2+色心缺陷,但不同方法生长的晶体样品中色心浓度差异明显。其中提拉法样品的F心浓度要高于温度梯度法样品,而温度梯度法样品中F+色心浓度要高于提拉法样品。分析表明,这与两种方法生长的晶体中杂质含量差异有关。通过研究辐照后晶体的热致发光谱发现提拉法与温度梯度法生长的蓝宝石晶体分别在145℃与150℃有明显的热致发光出现,采用初始上升法计算出两种方法生长的晶体的热致发光陷阱深度分别为1.15eV及1.05eV。
The effects of neutron irradiation on the defect formation and optical properties of single crystal of sapphire (α-Al2O3) were studied. The sapphire crystal grown by Czochralski method and temperature gradient method was irradiated by neutron. The absorption and fluorescence before and after irradiation The change of the spectra shows that the irradiation causes the formation of F, F + and F2 + color center defects in the sapphire crystal. However, the difference of the color center concentration in crystal samples grown by different methods is obvious. The C-F concentration in the Czochralski method was higher than that in the temperature gradient method, while the F + concentration in the temperature gradient method was higher than that in the Czochralski method. The analysis shows that this is related to the difference in impurity content in the crystals grown by the two methods. Through the study of the photoluminescence spectra of the irradiated crystals, it is found that there are obvious thermoluminescence of the sapphire crystals grown by Czochralski method and temperature gradient method at 145 ° C and 150 ° C, respectively. The initial growth method is used to calculate the crystal growth of the two methods The thermoluminescent trap depths were 1.15 eV and 1.05 eV, respectively.