发展了一种显示与估算氮化镓 (Ga N)位错密度的光辅助湿法刻蚀与原子力显微镜相结合的方法。所用 Ga N采用射频等离子体辅助的分子束外延技术 (RF-plasma MBE)生长 ,腐蚀液为 KOH水溶液。结果发现 ,使用 5 .0 M的 KOH溶液刻蚀 5分钟的 Ga N,其 AFM图谱上出现了非常明显的“小坑”,且“小坑密度”的量级与Ga N样品的位错密度量级相当。采用 X-ray衍射的二维三轴图谱 (TDTAM)研究 Ga N的马塞克柱状生长与缺陷 ,并延用文献报道的方法估算其位错密度 ,所得位错密度的结果与“小坑密度”一致。验证了“小坑”即为被刻蚀了的 Ga N位错。这样 ,对 RF-plasma MBE生长的 Ga N样品的位错密度估算 ,就多了一个有更广适用范围的测量方法 A method of combining light-assisted wet etching with atomic force microscopy to display and estimate the dislocation density of gallium nitride (GaN) has been developed. The Ga N used was grown by radio frequency plasma-assisted molecular beam epitaxy (RF-plasma MBE). The etching solution was KOH solution. As a result, it was found that GaN etching using 5 M KOH solution for 5 minutes showed a very obvious “pit” on the AFM pattern, and the order of “pit density” and dislocation density of Ga N samples The same level. The columnar growth and defects of GaAs were studied by X-ray diffraction in two-dimensional triaxial pattern (TDTAM). The dislocation density was estimated by the method reported in the literature. The results of dislocation density obtained were compared with “ ”Agree. Verify that “pit” is the GaIn dislocation that has been etched. Thus, an estimate of the dislocation density of a GaN sample grown on an RF-plasma MBE adds an even wider range of measurement methods