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分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件.对这些器件的关态击穿特性进行了研究.当背栅沟道注入剂量从1·0×1013增加到1·3×1013cm-2,浮体n型沟道器件关态击穿电压由5·2升高到6·7V,而H型栅体接触n型沟道器件关态击穿电压从11·9降低到9V.通过测量寄生双极晶体管静态增益和漏体pn结击穿电压,对部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件的击穿特性进行了定性解释和分析.
The partially depleted silicon on insulator and the H-type gate contact n-type channel devices were fabricated using different back gate channel implant doses. The off-state breakdown characteristics of these devices were investigated. When the back gate channel The implantation dose increased from 1.0 × 1013 to 1.3 × 1013cm-2. The floating breakdown voltage of the floating body n-type channel device increased from 5.2 to 6.7V, while the H-type body contacted the n-type channel The device turns off the breakdown voltage from 11.9 to 9 V. By measuring the parasitic bipolar transistor static gain and the drain pn junction breakdown voltage, the partially depleted silicon on insulator and the H-type body contact n-channel device The breakdown characteristics of a qualitative interpretation and analysis.