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本文研究制作碲镉汞列阵的一些主要问题。报导该材料涂复钝化层所得结果,及其与体载流子浓度的关系。还讨论了由于离子注入引起的电学性能变化。
This article studies some of the major issues in making HgCdTe arrays. The results reported for the material coated with the passivation layer and their relationship to the bulk carrier concentration are reported. Changes in electrical properties due to ion implantation are also discussed.