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由于铟镓锌氧化物(IGZO)薄膜具有高迁移率和高透过率的特点,它作为有源层被广泛的应用于薄膜晶体管(TFT).本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极,用简单低成本的掩膜法控制沟道的尺寸,制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管(IGZO-TFT).利用X射线衍射仪(XRD)和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱,研究了IGZO薄膜的结构和光学特性.通过测试IGZO-TFT的输出特性和转移特性曲线,讨论了IGZO有源层厚度对IGZO-TFT特性的影响.制备的IGZO-TFT器件的场效应迁移率高达15.6cm2·V-1·s-1,开关比高于107.
Due to its high mobility and high transmittance, indium gallium zinc oxide (IGZO) thin film has been widely used as an active layer in thin-film transistors (TFTs) .In this paper, magnetron sputtering (IGZO-TFT) with high mobility and bottom-gate structure by controlling the size of the channel with a simple low-cost mask method. The structure and optical properties of IGZO thin films were investigated by X-ray diffractometer (XRD) and UV-Vis spectrophotometer, respectively. The IGZO-TFT’s output characteristics and transfer characteristic curves , The influence of IGZO active layer thickness on IGZO-TFT characteristics is discussed.The field-effect mobility of IGZO-TFT devices is up to 15.6cm2 · V-1 · s-1 and the switching ratio is higher than 107.