给出了双极 RF功率管新的深阱结终端结构 .模拟分析表明 ,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的 95 %以上 .实验结果表明 ,深阱结终端结构器件 DCT2 6 0的BVCBO为理想值的 94 % ,比传统终端结构器件高 14 % ;与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1d B A new deep well junction termination structure of bipolar RF power transistor is given.The simulation results show that the deep well junction termination structure with optimized width, optimized depth and filled dielectric can improve the avalanche breakdown voltage to more than 95% of the ideal value The experimental results show that BVCBO of DCT260 is about 94% of the ideal value, which is 14% higher than that of the conventional terminal structure. Compared with the traditional structure, the structure of the structure Also reduce the collector junction area and leakage current, the device cut-off frequency increased by 33%, the power gain increased 1dB