论文部分内容阅读
设计了一种带有Al0 .2 2 Ga0 .78As/In0 .15Ga0 .85As/GaAs发射极空间层和GaAs/In0 .15Ga0 .85As/GaAs量子阱的共振隧穿二极管 (RTD)材料结构 ,并且成功地制作了相应的RTD器件 .在室温下 ,测试了RTD器件的直流特性 ,计算了RTD器件的峰谷电流比和可资电流密度 .在分析器件特性的基础上 ,指出调整材料结构和优化工艺参数将进一步提高RTD器件的性能
A resonant tunneling diode (RTD) material structure with an Al0.22Ga0.78As / In0.15Ga0.85As / GaAs emitter space layer and a GaAs / In0.15Ga0.85As / GaAs quantum well was designed and successfully The RTD devices were fabricated.The DC characteristics of the RTD devices were tested at room temperature and the ratio of peak-to-valley current and available current density of the RTD devices was calculated.After analyzing the characteristics of the devices, it was pointed out that adjusting the material structure and optimizing the process The parameters will further improve the performance of RTD devices